I-2019 Q2 Hynix izokhipha imemori yenqubo yesizukulwane sesibili ye-10nm

  I-SK hynix isanda kuveza ukuthi inkampani izokwandisa inqubo yayo yokwenza isizukulwane sokuqala sokwenza ama-nanometer (okusho i-1X nm) ukukhiqizwa kwe-DRAM, futhi izoqala ukuthengisa ubuchwepheshe bayo bokwakhiwa kwesizukulwane se-10 se-nanometer (obizwa nge-1Y nm) engxenyeni yesibini yesibili unyaka. Inkumbulo. Ukusheshisa ushintsho kubuchwepheshe be-10nm kuzovumela inkampani ukuthi inyuse ukuphuma kwe-DRAM, ekugcineni kunciphise izindleko nokulungiselela inkumbulo yesizukulwane esilandelayo.

Imikhiqizo yokuqala eyenziwe lapho kusetshenziswa ubuchwepheshe bokukhiqiza be-SK Hynix 1Y nm kuzoba yi-8Gb DDR4-3200 memory chip yayo. Umenzi uthi kunganciphisa usayizi we-chip wamadivayisi we-8Gb DDR4 ngama-20% futhi kunciphise ukusetshenziswa kwawo kwamandla ngo-15% uma kuqhathaniswa namadivayisi afanayo enzeke kusetshenziswa ubuchwepheshe bawo bokwenza i-1X nm. Ngaphezu kwalokho, i-chip ye-SK hynix ezayo ye-8Gb DDR4-3200 Chip ine ngcono ezimbili ezibalulekile: isikimu se-4-isigaba sokuhamba kwesikhathi nobuchwepheshe bokulawula i-Sense amplifier.

Yize lobu buchwepheshe bubalulekile ngisho naku-DDR4 kulo nyaka, kuthiwa abakwaSK hynix bazosebenzisa inqubo yabo yokukhiqiza i-1Y nm ukukhiqiza i-DDR5, LPDDR5 ne-GDDR6 DRAM. Ngakho-ke, i-Hynix kufanele ithuthukise ubuchwepheshe bayo bokwakhiwa kwesizukulwane se-nanometer besizukulwane esiseduze ngokushesha ukulungiselela ikusasa.